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| LAB MECHANICAL DATA Dimensions in mm (inches) SEME 2N3904CSM GENERAL PURPOSE NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS FEATURES 0.51 0.10 (0.02 0.004) 0.31 rad. (0.012) * SILICON PLANAR EPITAXIAL NPN TRANSISTOR * HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) * CECC SCREENING OPTIONS A 1.40 (0.055) max. 2.54 0.13 (0.10 0.005) 3 2 1 1.91 0.10 (0.075 0.004) 3.05 0.13 (0.12 0.005) A= 0.76 0.15 (0.03 0.006) 0.31 rad. (0.012) * SPACE QUALITY LEVELS OPTIONS * HIGH SPEED SATURATED SWITCHING 1.02 0.10 (0.04 0.004) SOT23 CERAMIC (LCC1 PACKAGE) Underside View PAD 1 - Base PAD 2 - Emitter PAD 3 - Collector APPLICATIONS: Hermetically sealed surface mount version of the popular 2N3904 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD RJA TSTG , TJ Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation @ TA =25C Derate above 25C Thermal Resistance Junction - Ambient Operating and Storage Temperature Range 60V 40V 6V 200mA 500mW 2.86mW / C 350C/W -55 to +200C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/95 LAB ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions V(BR)CEO* V(BR)CBO V(BR)EBO ICEX VCE(sat) VBE(sat)* Collector - Emitter Breakdown Voltage IC = 1mA Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Emitter Cut-off Current Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage IC = 10A IE = 10A VCE = 30V IC = 10mA IC = 50mA IC = 10mA IC = 50mA IB = 0 IE = 0 IC = 0 VEB = 3V IB = 1mA IB = 5mA IB = 1mA IB = 5mA IC = 0.1mA IC = 1mA hFE* DC Current Gain VCE = 1V IC = 10mA IC = 50mA IC = 100mA * Pulse Test: tp 300s, 2%. 40 70 100 60 30 300 -- 0.65 SEME 2N3904CSM Min. 40 60 6 Typ. Max. Unit V 50 0.2 0.3 0.85 0.95 nA V V SMALL SIGNAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions Min. ft Cob Cib hie hoe hre hfe NF Current Gain Bandwidth Product Output Capacitance Input Capacitance Input Impedance Output Admittance Voltage Feedback Ratio Small Signal Current Gain Noise Figure VCE = 20V f = 100MHz VCB = 5V f = 1MHz VBE = 0.5V f = 1MHz VCE = 10V IC = 1mA f = 1kHz VCE = 5V f = 1kHz IC = 100A RS = 1k 1 1 0.5 100 IC = 0 IE = 0 IC = 10mA 300 Typ. Max. Unit MHz 4 8 10 40 8 400 5 pF pF k hmos x 10-4 -- dB SWITCHING CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter Test Conditions td tr ts tf Delay Time Rise Time Storage Time Fall Time VCC = 3V IC = 10mA VCC = 3V VBE = 0.5V IB1 = 1mA VBE = 0.5V Min. Typ. Max. Unit 35 35 200 50 ns IB1 = IB2 = 1mA Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 4/95 |
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